I n the present paper a method for doping of PbTe with Ga during crystal growth from the vapour phase is presented. The galvanomagnetic and photoelectric properties of the produced material are compared with results of other techniques and the equivalence of these physical properties is proved. Furt
Autodoping during the deposition of epitaxial Silicon layers from the gas phase (I). Autodoping from the gas phase
✍ Scribed by Dipl.-Chem. H. Kühne
- Publisher
- John Wiley and Sons
- Year
- 1982
- Tongue
- English
- Weight
- 370 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0232-1300
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