𝔖 Bobbio Scriptorium
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Information about the Growth Process from Aluminium Concentration Profiles in Ga1−xAlxAs Liquid Phase Epitaxial Layers

✍ Scribed by Dr. K. Jacobs; Dr. B. Jacobs; Dr. P. Streubel; Prof. Dr. E. Butter


Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
279 KB
Volume
9
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

The variation in the composition of Ga~1−x~Al~x~As LPE layers with x < 0.37 as a function of layer thickness is examined by electron beam microprobe analysis. From the combination of these results with the experimentally established relation between layer thickness and cooling interval information is obtained about the onset of homogeneous nucleation in the LPE growth.