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Doping of PbTe with Ga during Growth from the Vapour Phase

✍ Scribed by K.-P. Möllmann; D. Siche; S. Zajnudinov

Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
356 KB
Volume
21
Category
Article
ISSN
0232-1300

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✦ Synopsis

I n the present paper a method for doping of PbTe with Ga during crystal growth from the vapour phase is presented. The galvanomagnetic and photoelectric properties of the produced material are compared with results of other techniques and the equivalence of these physical properties is proved. Furthermore a defect model of the build-in mechanism of Ga in PbTe is shown.

I n tfer vorliegonden Arbeit wird ein Verfahren zur Ga-Dotierung von PbTe beini Kristallwachstum aus der Dampfphase vorgestcllt. Das hergestellte Material wird hinsichtlich seiner galvanomagnetischen und photoelektrischen Eigenschaften rnit den Ergebriissen anderer Herbtellungstechnologien verglichen untl die Aquivalenz dieser physikalisehen Erscheinungen nachgewiesen. Daruber hinaus wird cin Defektmodell fur den Einbau von Ga in PbTe vorgeschlagen.

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