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Growth of GaAs from Ga solution under reduced gravity during the D2-mission

✍ Scribed by Dr. A. N. Danilewsky; Dr. G. Nagel; Prof. Dr. K. W. Benz


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
478 KB
Volume
29
Category
Article
ISSN
0232-1300

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✦ Synopsis


Growth of GaAs from Ga Solution under Reduced Gravity during the D2-Mission

Tellurium-doped GaAs was grown under reduced gravity during the Second German Spacelab-Mission D2. The growth experiment MD-ELI-TRABE is described and first results are presented.


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Determination of the diffusion coefficie
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## Abstract On the basis of the LPE GaAs growth rate measurements in which we used current marks of time, the diffusion coefficient and the critical supercooling of arsenic in Ga solution by a semiempirical method was determined. Some knowledge of these parameters is indispensable for investigating