✦ LIBER ✦
On the Bismuth Composition Dependent Concentration of Arsenic Atoms during LPE Growth of GaAs Layers from Ga–As–Bi Solution
✍ Scribed by Jeganathan, K. ;Saravanan, S. ;Baskar, K. ;Kumar, J.
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 221 KB
- Volume
- 165
- Category
- Article
- ISSN
- 0031-8965
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