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Determination of the diffusion coefficient of arsenic in Ga solution from growth rate measurements of LPG GaAs

✍ Scribed by Dr. T. Bryśkiewicz

Publisher: John Wiley and Sons
Year: 1976
Tongue: English
Weight: 359 KB
Volume: 11
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19760110403

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✦ Synopsis

Abstract

On the basis of the LPE GaAs growth rate measurements in which we used current marks of time, the diffusion coefficient and the critical supercooling of arsenic in Ga solution by a semiempirical method was determined. Some knowledge of these parameters is indispensable for investigating the growth mechanism and kinetics of epitaxial layers from high temperature solutions. Taking into account the fact that the diffusion coefficient as a function of temperature is of the form D(T) = D~0~ · exp (–B/T), the results were extrapolated in a range of temperatures 750–950°C typical for liquid epitaxy of GaAs.

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