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The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition

โœ Scribed by Sunwoo Lee; P. A. Dowben


Publisher
Springer
Year
1994
Tongue
English
Weight
433 KB
Volume
58
Category
Article
ISSN
1432-0630

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Using an internal inductively coupled plasma (ICP)-type-plasma enhanced vapor deposition system, microcrystalline silicon thin films were deposited as a function of H 2 /SiH 4 gas ratio at 180 ยฐC. Especially, the effects of deposition with/without an initial thin silicon layer formed with a very hig