✦ LIBER ✦

Subthreshold characteristics of a SiGe-channel PMOS device operating at 77 K

✍ Scribed by J.B. Kuo; J.H. Sim

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

An analytical delayed-turn-off model for

✍ Jai-Hoon Sim; Kuo, J.B. 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 720 KB

Modeling the effect of back gate bias on

✍ J.B. Kuo; M.C. Tang; J.H. Sim 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 347 KB

Comparison of drain-induced barrier-lowe

✍ Z.X. Yan; M.J. Deen 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 483 KB

Accumulation-type vs inversion-type ultr

✍ J.B. Kuo; J.H. Sim 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 378 KB

The dependence of drain-induced barrier

✍ Z.X. Yan; M.J. Deen 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 874 KB

2D device-level simulation study on d.c.

✍ J.B. Kuo; T.C. Lu 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 387 KB