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The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K

✍ Scribed by Z.X. Yan; M.J. Deen

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 874 KB
Volume: 33
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90029-e

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