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Comparison of drain-induced barrier-lowering in short-channel NMOS and PMOS devices at 77 K

✍ Scribed by Z.X. Yan; M.J. Deen

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 483 KB
Volume: 34
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(91)90101-4

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