2D device-level simulation study on d.c. and transient behavior of a SiGe-base HBT with a graded germanium profile in an ECL buffer operating at 77 K

✍ Scribed by J.B. Kuo; T.C. Lu

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 387 KB
• Volume: 38
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(94)00095-w