A 2D simulation study on the d.c. and transient behaviour of a SiGe-base heterojunction bipolar device with an extended germanium profile into the n-epi region with application to an ECL buffer

✍ Scribed by B.Y. Chen; H.C. Wu; J.B. Kuo

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 466 KB
• Volume: 39
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(95)00335-5