Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor
โ Scribed by Yong-Zhong Xiong; Ming-Bin Yu; Guo-Qiang Lo; Ming-Fu Li; Dim-Lee Kwong
- Book ID
- 114618475
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 293 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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๐ SIMILAR VOLUMES
The annealing effects on dielectric and electrode materials in Ti/SrTaO/TaN/TiN/Ti/Si metal-insulatormetal (MIM) capacitors were studied. The electrical and structural properties were investigated after subjecting the samples to annealing temperatures of 500 ยฐC, 700 ยฐC and 900 ยฐC. The electrical res
## Abstract In this article, doubleโstacked and tripleโstacked metalโinsulatorโmetal (MIM) capacitors fabricated in 0.18 ฮผm CMOS process are reported. These provide highโcapacitance density of 2 fF/ฮผm^2^ and 3.2 fF/ฮผm^2^ and excellent dc and RF characteristics, respectively. The lumped circuit mode