Characterization and modeling of stacked MIM on-chip capacitors with high-capacitance density up to 20 GHz frequency region
✍ Scribed by Hyunwon Moon; Sunil Yu; Seong-Sik Song; Ilku Nam
- Book ID
- 102521970
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 348 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this article, double‐stacked and triple‐stacked metal‐insulator‐metal (MIM) capacitors fabricated in 0.18 μm CMOS process are reported. These provide high‐capacitance density of 2 fF/μm^2^ and 3.2 fF/μm^2^ and excellent dc and RF characteristics, respectively. The lumped circuit model of the stacked MIM capacitors is presented for high‐frequency applications up to 20 GHz. The stacked MIM capacitors offer a reduced chip area for a given capacitance value and are expected to be a viable choice for integration of RF/mixed‐mode circuits in a single chip. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1235–1238, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24305