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Sub-gap absorption study of defects in ion-implanted and annealed Si layers

โœ Scribed by L. Luciani; U. Zammit; M. Marinelli; R. Pizzoferrato

Publisher
Springer
Year
1990
Tongue
English
Weight
630 KB
Volume
50
Category
Article
ISSN
1432-0630

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High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 โ€ข 10 10 cm ร€2 . The low dose ens