Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

✍ Scribed by L. Vines; E.V. Monakhov; J. Jensen; A.Yu. Kuznetsov; B.G. Svensson

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 670 KB
• Volume: 159-160
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2008.11.031