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Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient

โœ Scribed by Changchun Chen; Jiangfeng Liu; Benhai Yu; Qirun Dai


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
333 KB
Volume
38
Category
Article
ISSN
0026-2692

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