Characterization of strained silicon on relaxed SiGe layer made by H ion implantation and annealing in ultra-high vacuum ambient

✍ Scribed by Changchun Chen; Benhai Yu; Jiangfeng Liu; Qirun Dai

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 399 KB
• Volume: 85
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.03.007