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Sub-100 nm structures by neutral atom lithography

✍ Scribed by Th. Schulze; B. Brezger; P.O. Schmidt; R. Mertens; A.S. Bell; T. Pfau; J. Mlynek

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 1019 KB
Volume: 46
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(99)00026-x

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✦ Synopsis

Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below A/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.

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