✦ LIBER ✦

Sub-100 nm gate MESFET by electron beam mix&match

✍ Scribed by W. De Raedt; R. Jonckheere; M. Van Hove; G. Borghs; M. Van Rossum; L. Van den hove; R. Born

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 442 KB
Volume: 9
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(89)90074-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electron beam lithography of 100 nm T-ga

Electron beam lithography of 100 nm T-gates for GaAs MESFETs

✍ B. Wolfstädter; A. Colquhoun; K. Wegener 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 344 KB

Determination of proximity effect parame

Determination of proximity effect parameters by means of CD-linearity in sub 100 nm electron beam lithography

✍ M. Hauptmann; K.-H. Choi; P. Jaschinsky; C. Hohle; J. Kretz; L.M. Eng 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 487 KB

Sub-100 nm T-gate fabrication using

Sub-100 nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50 kV e-beam lithography

✍ S.C Kim; B.O Lim; H.S Lee; D.-H Shin; S.K Kim; H.C Park; J.K Rhee 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 366 KB

Recent advances in electron beam lithography have made possible the fabrication of pseudomorphic high electron mobility transistors (PHEMTs) with gate length well in the nanometer regime. This gate processes mostly require thin dielectric support layers in order to prevent collapse of gate head due