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Electron beam lithography of 100 nm T-gates for GaAs MESFETs

✍ Scribed by B. Wolfstädter; A. Colquhoun; K. Wegener


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
344 KB
Volume
11
Category
Article
ISSN
0167-9317

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We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we a