Fabrication of ultra-short gate MESFETs
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G. Bernstein; D.K. Ferry
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Article
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1986
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Elsevier Science
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English
β 447 KB
We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we a