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Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs

✍ Scribed by G. Bernstein; D.K. Ferry


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
402 KB
Volume
2
Category
Article
ISSN
0749-6036

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Fabrication of ultra-short gate MESFETs
✍ G. Bernstein; D.K. Ferry πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 447 KB

We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we a