Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below A/2. In the first approach we inv
Nanoimprint lithography of sub-100 nm 3D structures
β Scribed by M. Konijn; M.M. Alkaisi; R.J. Blaikie
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 297 KB
- Volume
- 78-79
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
A simplified method of creating multilevel imprint molds with sub-100 nm dimensions has been developed. The silicon nitride (Si x N y ) molds are patterned in a negative tone resist using single write electron beam lithography process, where the feature height is controlled by the exposure dosage. These patterns are then transferred into the substrate by a single reactive ion etch. By defining multilevel structures in a single write, a number of alignment steps are eliminated when fabricating 3D structures. The patterns were very well reproduced when imprinted in poly(methyl-methacrylate) at low temperatures, with no observed damage to the mold.
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