Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells
β Scribed by Gui-Jiang, Lin; Hong-Kai, Lai; Cheng, Li; Song-Yan, Chen; Jin-Zhong, Yu
- Book ID
- 120819101
- Publisher
- IOP Publishing
- Year
- 2008
- Tongue
- English
- Weight
- 223 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1674-1056
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π SIMILAR VOLUMES
A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u
We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p :2.8;10 cm\, both p-and s-polarized absorptions have been observed and transitions to several excited states are clearly identif