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Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells

✍ Scribed by T. Fromherz; P. Kruck; M. Helm; G. Bauer; J.F. Nützel; G. Abstreiter

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
411 KB
Volume
20
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p :2.8;10 cm, both p-and s-polarized absorptions have been observed and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly insensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsitivity.

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