Capture of carriers excited by interband and intersubband absorption in GaAs/AlAs/AlGaAs double-barrier quantum wells
✍ Scribed by H. Schneider; S. Ehret; E.C. Larkins; A. Vinattieri; J. Shah
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 151 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We report on the carrier dynamics in n-type double-barrier quantum well structures in an electric field. Both the intersubband and interband photocurrents, excited by long-wavelength ((4 \mu \mathrm{m})) and short-wavelength ((0.5 \mu \mathrm{m})) radiation, respectively, show a photovoltaic asymmetry with respect to the applied field. This asymmetry arises from an internal field due to an asymmetric dopant distribution with respect to the well centers. Time-dependent photoluminescence measurements allow us to determine the field dependence of the electron and hole capture times.