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Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

✍ Scribed by P. Kruck; A. Weichselbaum; M. Helm; T. Fromherz; G. Bauer; J.F. Nützel; G. Abstreiter

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
94 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis

A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 µm with a peak-wavelength of λ p = 5 µm under normal incidence illumination. At the optimum bias operating point a detectivity D * λ = 2 × 10 10 cm √ Hz W -1 is achieved. On the basis of a self-consistent six-band Luttinger-Kohn calculation the p-and s-polarized intersubband transitions, leading to the observed photoconductivity, are identified.

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A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt