Strain dependence of valence band structure and intersubband transitions in coupled quantum wells
✍ Scribed by Bozena Olejnı́ková
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 263 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
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📜 SIMILAR VOLUMES
Magneto-optical investigations of a series of strain-balanced InGaAs/GaAlInAs coupled quantum wells are described, showing how changes in the strain within the InGaAs wells modify the conduction and valence-band dispersion curves. Large non-parabolicities in both bands are demonstrated by comparison
We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p :2.8;10 cm\, both p-and s-polarized absorptions have been observed and transitions to several excited states are clearly identif