Strain-dependent intersubband absorption in the valence band of SiGe quantum wells
β Scribed by Yakimov, A I; Kirienko, V V; Armbrister, V A; Bloshkin, A A
- Book ID
- 125419435
- Publisher
- Institute of Physics
- Year
- 2014
- Tongue
- English
- Weight
- 543 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0268-1242
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π SIMILAR VOLUMES
We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p :2.8;10 cm\, both p-and s-polarized absorptions have been observed and transitions to several excited states are clearly identif
In this paper we focus on the temperature dependence and on a detailed analysis of the interplay between Coulomb effects at Hartree-Fock level, namely: subband shifts, exchange and depolarization shifts to the valence intersubband absorption of III-V semiconductor quantum wells. We show how the tend
A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u