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Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells

โœ Scribed by Boujdaria, K.; Ridene, S.; Radhia, S. Ben; Zitouni, O.; Bouchriha, H.; Fishman, G.


Book ID
121758675
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
271 KB
Volume
92
Category
Article
ISSN
0021-8979

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Intersubband transitions in strained Si/
โœ Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 151 KB

The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained