Intersubband transitions in strained Si/
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Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis
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Article
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2000
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Elsevier Science
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English
⚖ 151 KB
The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained