Electron intersubband absorption in modulation and well-doped Si/Si1−xGex multiple quantum wells
✍ Scribed by H. Hertle; F. Schäffler; A. Zrenner; G. Abstreiter; E. Gornik
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 297 KB
- Volume
- 222
- Category
- Article
- ISSN
- 0040-6090
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A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt
The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained