Photo-induced intersubband absorption in Si/Si1−xGex quantum wells
✍ Scribed by P. Boucaud; L. Wu; F.H. Julien; J.-M. Lourtioz; I. Sagnes; Y. Campidelli; P.-A. Badox
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 260 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0169-4332
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📜 SIMILAR VOLUMES
The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained
A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt