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Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures

✍ Scribed by Murzyn, P.; Pidgeon, C. R.; Wells, J.-P. R.; Bradley, I. V.; Ikonic, Z.; Kelsall, R. W.; Harrison, P.; Lynch, S. A.; Paul, D. J.; Arnone, D. D.; Robbins, D. J.; Norris, D.; Cullis, A. G.


Book ID
121504300
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
232 KB
Volume
80
Category
Article
ISSN
0003-6951

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A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u