Infrared spectroscopy in p-type SiGe/Si quantum wells
β Scribed by J.M. Berroir; S. Zanier; Y. Guldner; J.P. Vieren; I. Sagnes; Y. Campidelli; P.A. Badoz
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 400 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u
Studies of the luminescence spectra of Si 1Γx Ge x /Si quantum wells with a low Ge content have been carried out in a wide pumping power range. It was shown that a Si 1Γx Ge x /Si quantum well spectrum variation observed at low temperatures and high pumping powers is caused by cooperative effects-fo