Infrared absorption in SiGe/Si multiple quantum wells
β Scribed by Shulin Gu; Ronghua Wang; Ping Han; Liqun Hu; Rong Zhang; Youdou Zheng
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 313 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 Β΅m with a peak-wavelength of Ξ» p = 5 Β΅m u
Studies of the luminescence spectra of Si 1Γx Ge x /Si quantum wells with a low Ge content have been carried out in a wide pumping power range. It was shown that a Si 1Γx Ge x /Si quantum well spectrum variation observed at low temperatures and high pumping powers is caused by cooperative effects-fo