Photoconductive gain of SiGe/Si quantum well photodetectors
β Scribed by Fei Liu; Song Tong; Hyung-jun Kim; Kang L. Wang
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 305 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0925-3467
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π SIMILAR VOLUMES
Studies of the luminescence spectra of Si 1Γx Ge x /Si quantum wells with a low Ge content have been carried out in a wide pumping power range. It was shown that a Si 1Γx Ge x /Si quantum well spectrum variation observed at low temperatures and high pumping powers is caused by cooperative effects-fo
In standard electron spin resonance (ESR) spectroscopy on modulation-doped SiGe/Si/SiGe quantum wells, we observe a very sharp ESR due to the 2d electron gas and also cyclotron resonance (CR) of free carriers in the well. Both signals increase persistently after illumination and the 2d CR becomes sh