Shallow acceptors in Si/SiGe quantum well heterostructures
β Scribed by V. Ya. Aleshkin; V. I. Gavrilenko; D. V. Kozlov
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 272 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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π SIMILAR VOLUMES
Far-infrared photoconductivity spectra of strained multi-quantum well Ge/Ge 1Β± Β±x Si x (x % 0.1) heterostructures resulting from the excitation of shallow acceptors were investigated. The spectra are shown to be shifted to the long-wavelength end of the far-infrared range if compared with acceptors
Studies of the luminescence spectra of Si 1Γx Ge x /Si quantum wells with a low Ge content have been carried out in a wide pumping power range. It was shown that a Si 1Γx Ge x /Si quantum well spectrum variation observed at low temperatures and high pumping powers is caused by cooperative effects-fo