Far-Infrared Spectroscopy of Shallow Acceptors in Strained Ge/GeSi Quantum Well Heterostructures

✍ Scribed by V.Ya. Aleshkin; V.I. Gavrilenko; I.V. Erofeeva; A.L. Korotkov; D.V. Kozlov; O.A. Kuznetsov; M.D. Moldavskaya

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 133 KB
• Volume: 210
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199812)210:2<649::aid-pssb649>3.0.co;2-1

✦ Synopsis

Far-infrared photoconductivity spectra of strained multi-quantum well Ge/Ge 1± ±x Si x (x % 0.1) heterostructures resulting from the excitation of shallow acceptors were investigated. The spectra are shown to be shifted to the long-wavelength end of the far-infrared range if compared with acceptors in bulk p-Ge due to the splitting of light and heavy holes subbands in Ge layers owing to the built-inº deformation and size quantization. The shallow acceptor spectra in bulk germanium under uniaxial tension, that is equivalentº to the deformation of Ge layers in the heterostructures, were calculated by the variational technique; the results were used for the interpretation of the experimental data. Ge/GeSi heterostructures are shown to be a sensitive photoelectric detector for the long wavelength end of FIR range.