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ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells

✍ Scribed by W. Jantsch; Z. Wilamowski; Z. Wilamowski; N. Sandersfeld; F. Schäffler

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
152 KB
Volume
210
Category
Article
ISSN
0370-1972

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✦ Synopsis

In standard electron spin resonance (ESR) spectroscopy on modulation-doped SiGe/Si/SiGe quantum wells, we observe a very sharp ESR due to the 2d electron gas and also cyclotron resonance (CR) of free carriers in the well. Both signals increase persistently after illumination and the 2d CR becomes sharper by one order of magnitude. We explain these effects together with the lack of Shubnikov-de Haas oscillations in terms of potential fluctuations due to the ionized donors which are partially neutralized and effectively screened by photogenerated carriers.

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