Investigation of delta-doped quantum wells for power FET applications

✍ Scribed by J.M. Roberts; J.J. Harris; N.J. Woods; M. Hopkinson

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 75 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0242

✦ Synopsis

We report the use of strain-balanced quantum-well structures to generate high carrier density, high mobility layers suitable for power field effect transistor (FET) applications. Standard designs of modulation-doped heterojunctions have a sheet carrier density limited to a maximum of ∼3 × 10 12 cm -2 , while doped channel devices allow higher densities, but with degraded mobility. By combining the technique of delta-doping with the use of a compositionally graded InGaAs quantum well, grown strain balanced on InP, high mobilities and excellent saturation drift velocities have been obtained for sheet densities of 4-5 × 10 12 cm -2 . This paper describes the structure and electrical properties of the layers and assesses their potential for FETs.