In standard electron spin resonance (ESR) spectroscopy on modulation-doped SiGe/Si/SiGe quantum wells, we observe a very sharp ESR due to the 2d electron gas and also cyclotron resonance (CR) of free carriers in the well. Both signals increase persistently after illumination and the 2d CR becomes sh
β¦ LIBER β¦
Effect of strain in Si/SiGe modulation-doped quantum wells
β Scribed by K. Ismail; B.S. Meyerson; J. Nocera; F.F. Fang; P.J. Wang
- Book ID
- 118365478
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 416 KB
- Volume
- 267
- Category
- Article
- ISSN
- 0039-6028
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