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Intense photoluminescence observed in modulation doped Si/SiGe quantum well structures

✍ Scribed by W.-X. Ni; I.A. Buyanova; A. Henry; W.M. Chen; K.B. Joelsson; G.V. Hansson; B. Monemar


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
371 KB
Volume
102
Category
Article
ISSN
0169-4332

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In standard electron spin resonance (ESR) spectroscopy on modulation-doped SiGe/Si/SiGe quantum wells, we observe a very sharp ESR due to the 2d electron gas and also cyclotron resonance (CR) of free carriers in the well. Both signals increase persistently after illumination and the 2d CR becomes sh