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Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stress

✍ Scribed by T. Mohammed-Brahim; A. Rahal; G. Gautier; F. Raoult; H. Toutah; B. Tala-Ighil; J.F. Llibre

Book ID: 117145696
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 131 KB
Volume: 299-302
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(02)00933-x

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