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Gate-Bias Stress Stability of P-Type SnO Thin-Film Transistors Fabricated by RF-Sputtering

✍ Scribed by I-Chung Chiu, ; I-Chun Cheng,


Book ID
121701097
Publisher
IEEE
Year
2014
Tongue
English
Weight
803 KB
Volume
35
Category
Article
ISSN
0741-3106

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p-Type aluminum-nitrogen (Al-N) co-doped zinc oxide (ZnO) thin films were deposited on glass substrate at 300 1C by RF reactive magnetron sputtering using an aluminum-doped zinc oxide (2.4 wt%Al 2 O 3 ) target and N 2 reactive gas. In addition, the effect of N 2 reactive gas on the electrical and st