Structural and electrical properties of Li-doped p-type ZnO thin films fabricated by RF magnetron sputtering
β Scribed by Lidan Tang; Bing Wang; Yue Zhang; Yousong Gu
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 576 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0921-5107
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Arsenic doped p-type ZnO thin films were grown on sapphire substrate by magnetron sputtering. As grown films reveal p-type conduction confirmed by Hall-effect and photoluminescence measurements. The p-type film with a hole concentration of 2.16Γ 10 17 cm -3 , mobility of 1.30 cm 2 /V.s and resistivi
The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstruc