Fabrication and characterization of magnetron sputtered arsenic doped p-type ZnO epitaxial thin films

✍ Scribed by Amit Kumar; Manoj Kumar; Beer Pal Singh

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 236 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.05.050

✦ Synopsis

Arsenic doped p-type ZnO thin films were grown on sapphire substrate by magnetron sputtering. As grown films reveal p-type conduction confirmed by Hall-effect and photoluminescence measurements. The p-type film with a hole concentration of 2.16× 10 17 cm -3 , mobility of 1.30 cm 2 /V.s and resistivity of 22.29 -m were obtained at substrate temperature of 700 • C. ZnO homojunction synthesized by insitu deposition of As doped p-ZnO layer on Al doped n-ZnO layer showed p-n diode like characteristics. X-ray pole figure and Transmission Electron Microscope studies confirm epitaxial nature of the films. Photoluminescence results exhibit the peaks associated with donor acceptor pair emission.