Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering

✍ Scribed by Hsin-Chun Lu; Jo-Ling Lu; Chi-You Lai; Gwo-Mei Wu

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 244 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.170

✦ Synopsis

p-Type aluminum-nitrogen (Al-N) co-doped zinc oxide (ZnO) thin films were deposited on glass substrate at 300 1C by RF reactive magnetron sputtering using an aluminum-doped zinc oxide (2.4 wt%Al 2 O 3 ) target and N 2 reactive gas. In addition, the effect of N 2 reactive gas on the electrical and structural properties of Al-N co-doped ZnO thin films was also investigated. It was found that p-type Al-N co-doped ZnO thin films could be obtained only when the volume ratio of N 2 in the N 2 -containing Ar working gas exceeded 10%. p-Type Al-N co-doped ZnO thin films with a minimum resistivity of 0.141 O cm, a p-type carrier concentration of 5.84 Â 1018 cm À3 , and a Hall mobility of 3.68 cm 2 /V s were obtained in this study when the volume ratio of N 2 in the working gas was 30%.