Synthesis of p-type Al–N codoped ZnO films using N2O as a reactive gas by RF magnetron sputtering

Fabrication of low-resistive p-type Al–N

Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering

✍ Hsin-Chun Lu; Jo-Ling Lu; Chi-You Lai; Gwo-Mei Wu 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 244 KB

p-Type aluminum-nitrogen (Al-N) co-doped zinc oxide (ZnO) thin films were deposited on glass substrate at 300 1C by RF reactive magnetron sputtering using an aluminum-doped zinc oxide (2.4 wt%Al 2 O 3 ) target and N 2 reactive gas. In addition, the effect of N 2 reactive gas on the electrical and st