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Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress

✍ Scribed by Dapeng Zhou; Mingxiang Wang; Shengdong Zhang

Book ID
114620628
Publisher
IEEE
Year
2011
Tongue
English
Weight
804 KB
Volume
58
Category
Article
ISSN
0018-9383

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## Abstract The crucial influence of the interface between the gate dielectric and intrinsic layer has been studied in detail for amorphous silicon, polymorphous silicon and microcrystalline silicon bottom gate thin‐film transistors. We show that the electrical parameters of the TFTs depend directl